ASAP Defense Parts is a streamlined procurement platform for those seeking in-demand NSN parts, military and defense parts, aerospace parts, and other comparable items. We appreciate your interest in part number SM-A-595820-1, a Solid State Devices Inc product that is listed alongside the description “Semiconductordeviceset” and the NSN 5961005267975. You are always welcome to request quotes for part number SM-A-595820-1 by filling out and submitting the RFQ form below, and we promise swift responses with customized solutions provided in 15 minutes or less from the review of a completed form.
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For your convenience, we list items like Solid State Devices Inc part number SM-A-595820-1 with all relevant designations. For example, while part number SM-A-595820-1 belongs to NSN 5961-00-526-7975, it is also categorized under FSC 5961 Semiconductor Devices and Associated Hardware, a commodity classification designation that organizes similar products together. Moreover, in contrast to other websites that often require one to choose between quality, pricing, and timely fulfillment, we routinely utilize our market expertise and purchasing power to present optimal solutions that cater to the unique specifications of each customer. With all of this in mind, begin the procurement process for part number SM-A-595820-1 from CAGE Code 30043 on our website, and see why so many customers steadily depend on us for their needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-526-7975 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 005267975 | 0 | N | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | U | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
FA3413U | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,REPETITIVE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 2ND SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 1ST SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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